Kingston SNY1600S11-4G-EDEG 4GB vs G Skill Intl F4-4000C19-8GTZ 8GB

总分

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分

G Skill Intl F4-4000C19-8GTZ 8GB

G Skill Intl F4-4000C19-8GTZ 8GB

差异规格评论

差异

Kingston SNY1600S11-4G-EDEG 4GB

需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB

报告一个错误

G Skill Intl F4-4000C19-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-4000C19-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 -7% 更低的延时
更快的读取速度，GB/s

17.7 9.4

测试中的平均数值
更快的写入速度，GB/s

15.1 5.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston SNY1600S11-4G-EDEG 4GB

G Skill Intl F4-4000C19-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 27
读取速度，GB/s

9.4 17.7
写入速度，GB/s

5.1 15.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1432 3491

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SF4641G8CK8I6GKSEG 8GB

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Samsung M471B5673FH0-CF8 2GB

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Apacer Technology 78.DAGQ7.40B0B 16GB

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Avant Technology J642GU42J7240N4 16GB

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SK Hynix HMT425S6AFR6A-PB 2GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Avant Technology W642GU42J5213N2 16GB

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Kingston ACR256X64D3S1333C9 2GB

Wintec Industries AU2G732-1G6H005 2GB

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Kingston HX432C15PB3/16G 16GB

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Samsung M378B5673FH0-CH9 2GB

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G Skill Intl F4-3200C14-16GTZN 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston HP32D4U8S8HD-8X 8GB

Kingston HP32D4U8S8HD-8X 8GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-2133C15-8GRR2 8GB

G Skill Intl F4-2133C15-8GRR2 8GB