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Kingston SNY1600S11-4G-EDEG 4GB
G Skill Intl F4-4266C17-16GTRGB 16GB

Kingston SNY1600S11-4G-EDEG 4GB vs G Skill Intl F4-4266C17-16GTRGB 16GB

总分
star star star star star
Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分
star star star star star
G Skill Intl F4-4266C17-16GTRGB 16GB

G Skill Intl F4-4266C17-16GTRGB 16GB

差异 规格 评论

差异

Kingston SNY1600S11-4G-EDEG 4GB 需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 3% 更低的延时
G Skill Intl F4-4266C17-16GTRGB 16GB 需要考虑的原因
G Skill Intl F4-4266C17-16GTRGB 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 5.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston SNY1600S11-4G-EDEG 4GB
G Skill Intl F4-4266C17-16GTRGB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 30
  • 读取速度，GB/s
    9.4 left arrow 15.7
  • 写入速度，GB/s
    5.1 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1432 left arrow 3495

Kingston SNY1600S11-4G-EDEG 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB

G Skill Intl F4-4266C17-16GTRGB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Kingston KHX2666C16D4/16GX 16GB
Kingston KHX2666C16D4/16GX 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Ramsta Ramsta-2666MHz-4G 4GB
Ramsta Ramsta-2666MHz-4G 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3200C16-16GSXWB 16GB
G Skill Intl F4-3200C16-16GSXWB 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
SK Hynix HMA81GU6CJR8N-VK 8GB
SK Hynix HMA81GU6CJR8N-VK 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2800C15-4GVR 4GB
G Skill Intl F4-2800C15-4GVR 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Lexar Co Limited LD4AS016G-H2666G 16GB
Lexar Co Limited LD4AS016G-H2666G 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3200C15-8GTZ 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
SK Hynix HMA82GU6CJR8N-VK 16GB
SK Hynix HMA82GU6CJR8N-VK 16GB
内存RAM
Team Group Inc. TEAMGROUP-UD3-2400 8GB
Team Group Inc. TEAMGROUP-UD3-2400 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
内存RAM
Nanya Technology NT1GT64U88D0BY-AD 1GB
Nanya Technology NT1GT64U88D0BY-AD 1GB
Teikon TMA851U6AFR6N-UHHC 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM