Kingston SNY1600S11-4G-EDEG 4GB vs Kingston KHX2666C15S4/16G 16GB

总分

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分

Kingston KHX2666C15S4/16G 16GB

Kingston KHX2666C15S4/16G 16GB

差异规格评论

差异

Kingston SNY1600S11-4G-EDEG 4GB

需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 32

左右 9% 更低的延时

Kingston KHX2666C15S4/16G 16GB

需要考虑的原因
Kingston KHX2666C15S4/16G 16GB

报告一个错误

更快的读取速度，GB/s

16.5 9.4

测试中的平均数值
更快的写入速度，GB/s

13.4 5.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston SNY1600S11-4G-EDEG 4GB

Kingston KHX2666C15S4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 32
读取速度，GB/s

9.4 16.5
写入速度，GB/s

5.1 13.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1432 3156

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMX4GX3M1A1333C9 4GB

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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

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Samsung M393A2G40DB1-CRC 16GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

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Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Crucial Technology BL4G24C16U4B.8FB 4GB

Crucial Technology BL4G24C16U4B.8FB 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

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Micron Technology 16ATF4G64AZ-3G2E1 32GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingston HP32D4U2S8ME-16 16GB

Kingston HP32D4U2S8ME-16 16GB