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Kllisre KRE-D3U1600M/8G 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Kllisre KRE-D3U1600M/8G 8GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

总分
star star star star star
Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

总分
star star star star star
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

差异 规格 评论

差异

Kllisre KRE-D3U1600M/8G 8GB 需要考虑的原因
Kllisre KRE-D3U1600M/8G 8GB
报告一个错误
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB 需要考虑的原因
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 40
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    21.4 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kllisre KRE-D3U1600M/8G 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 37
  • 读取速度，GB/s
    14.4 left arrow 21.4
  • 写入速度，GB/s
    9.0 left arrow 14.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2455 left arrow 3448

Kllisre KRE-D3U1600M/8G 8GB RAM的比较

Samsung M378B5173EB0-YK0 4GB
SK Hynix HMA41GR7AFR4N-UH 8GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M4A2666C15 4GB
Corsair CMK16GX4M4A2666C15 4GB
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Essencore Limited KD48GU88C-26N1600 8GB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
内存RAM
Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
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G Skill Intl F4-2666C15-8GVB 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
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Micron Technology 16ATF2G64AZ-2G6E1 16GB
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A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
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G Skill Intl F4-3200C15-8GVR 8GB
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AMD R5316G1609U2K 8GB
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Samsung M378A1G44BB0-CWE 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2933C16-8GTZRX 8GB
G Skill Intl F4-2933C16-8GTZRX 8GB
内存RAM
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Samsung M393B1G70BH0-YK0 8GB
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内存RAM
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Patriot Memory (PDP Systems) PSD34G16002 4GB
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Kingston 9905625-142.A00G 16GB
内存RAM
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Kingston HP698651-154-MCN 8GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT8G4SFS824A.M8FA 8GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
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