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Kreton Corporation 51624xxxx68x35xxxx 2GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17
    测试中的平均数值
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 59
    左右 -146% 更低的延时
  • 更快的写入速度，GB/s
    13.5 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 24
  • 读取速度，GB/s
    4,168.0 left arrow 17.0
  • 写入速度，GB/s
    1,855.7 left arrow 13.5
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    680 left arrow 2703

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
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G Skill Intl F4-3466C16-8GTZSW 8GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
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Panram International Corporation M424051 4GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
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A-DATA Technology ADOVE1A0834E 1GB
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Kingston 9905633-017.A00G 8GB
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Kingmax Semiconductor FLFF65F-C6NG9 4GB
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内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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Transcend Information JM2666HSE-16G 16GB
内存RAM
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Micron Technology 16JTF51264HZ-1G6M1 4GB
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内存RAM
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Strontium EVMT8G1600U86S 8GB
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内存RAM
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内存RAM
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Kingston KVR800D2N6/2G 2GB
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Samsung M378A4G43AB2-CWE 32GB
内存RAM
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Kingston MSI16D3LS1MNG/8G 8GB
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内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Corsair CMU32GX4M2C3200C16 16GB
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