Kingston 2GB-DDR2 800Mhz 2GB vs G Skill Intl F4-3466C16-8GTZSW 8GB

总分

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分

G Skill Intl F4-3466C16-8GTZSW 8GB

G Skill Intl F4-3466C16-8GTZSW 8GB

差异规格评论

差异

Kingston 2GB-DDR2 800Mhz 2GB

需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB

报告一个错误

低于PassMark测试中的延时，ns

43 46

左右 7% 更低的延时
更快的读取速度，GB/s

5 11.6

测试中的平均数值
更快的写入速度，GB/s

2,160.7 10.4

测试中的平均数值

G Skill Intl F4-3466C16-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZSW 8GB

报告一个错误

更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston 2GB-DDR2 800Mhz 2GB

G Skill Intl F4-3466C16-8GTZSW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

43 46
读取速度，GB/s

5,987.5 11.6
写入速度，GB/s

2,160.7 10.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

957 2469

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CML8GX3M2A1866C9 4GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Essencore Limited IM4AGS88N26-GIIHA0 16GB

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Unifosa Corporation HU564404EP0200 4GB

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Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

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Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMK16GX4M2B3733C17 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT8G4DFD824A.C16FE 8GB

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GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB