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SK Hynix HYMP112S64CP6-S6 1GB
Samsung M378A1K43BB1-CRC 8GB

SK Hynix HYMP112S64CP6-S6 1GB vs Samsung M378A1K43BB1-CRC 8GB

总分
star star star star star
SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分
star star star star star
Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

差异 规格 评论

差异

SK Hynix HYMP112S64CP6-S6 1GB 需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.9
    测试中的平均数值
Samsung M378A1K43BB1-CRC 8GB 需要考虑的原因
Samsung M378A1K43BB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 65
    左右 -195% 更低的延时
  • 更快的写入速度，GB/s
    9.5 left arrow 1,711.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112S64CP6-S6 1GB
Samsung M378A1K43BB1-CRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 22
  • 读取速度，GB/s
    4,018.7 left arrow 15.9
  • 写入速度，GB/s
    1,711.1 left arrow 9.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    513 left arrow 2611

SK Hynix HYMP112S64CP6-S6 1GB RAM的比较

Corsair VSA2GSDS667C4 2GB
SK Hynix HYMP125S64CP8-S6 2GB

Samsung M378A1K43BB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M395T5160QZ4-CE66 2GB
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内存RAM
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Corsair CMW16GX4M2C3466C16 8GB
Corsair CMW16GX4M2C3466C16 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3000C15-16GVR 16GB
G Skill Intl F4-3000C15-16GVR 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Corsair CMWS8GL3200K16W4E 8GB
Corsair CMWS8GL3200K16W4E 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Corsair CMT128GX4M4C3200C16 32GB
Corsair CMT128GX4M4C3200C16 32GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Samsung M471A1A43DB0-CPB 8GB
Samsung M471A1A43DB0-CPB 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMN32GX4M2Z4600C18 16GB
Corsair CMN32GX4M2Z4600C18 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Kingston 9905713-028.A00G 8GB
Kingston 9905713-028.A00G 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3200C16-8GTZN 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
Samsung M391A2K43BB1-CRC 16GB
Samsung M391A2K43BB1-CRC 16GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Kingston 9905665-011.A00G 4GB
Kingston 9905665-011.A00G 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
内存RAM