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Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB

Samsung M393B1K70QB0-CK0 8GB vs A-DATA Technology AO1P24HC4N2-BYNS 4GB

总分
star star star star star
Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分
star star star star star
A-DATA Technology AO1P24HC4N2-BYNS 4GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

差异 规格 评论

差异

Samsung M393B1K70QB0-CK0 8GB 需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 48
    左右 2% 更低的延时
A-DATA Technology AO1P24HC4N2-BYNS 4GB 需要考虑的原因
A-DATA Technology AO1P24HC4N2-BYNS 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.4 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 48
  • 读取速度，GB/s
    10.4 left arrow 14.4
  • 写入速度，GB/s
    7.8 left arrow 12.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2169 left arrow 2080

Samsung M393B1K70QB0-CK0 8GB RAM的比较

V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Kingston KF556C40-16 16GB
Kingston KF556C40-16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-4000C18-16GTZR 16GB
G Skill Intl F4-4000C18-16GTZR 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3466C16-8GVR 8GB
G Skill Intl F4-3466C16-8GVR 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Samsung M474A2K43BB1-CRC 16GB
Samsung M474A2K43BB1-CRC 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston ACR32D4S2S1ME-8 8GB
Kingston ACR32D4S2S1ME-8 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston MSI24D4S7S7MH-16 16GB
Kingston MSI24D4S7S7MH-16 16GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Mushkin MR[A/B]4U320GJJM8G 8GB
内存RAM