Kreton Corporation 51624xxxx68x35xxxx 2GB vs Corsair CM4X16GE2133C13K8 16GB

总分

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分

Corsair CM4X16GE2133C13K8 16GB

Corsair CM4X16GE2133C13K8 16GB

差异规格评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB

需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB

报告一个错误

更快的读取速度，GB/s

4 16.1

测试中的平均数值

Corsair CM4X16GE2133C13K8 16GB

需要考虑的原因
Corsair CM4X16GE2133C13K8 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 59

左右 -111% 更低的延时
更快的写入速度，GB/s

12.9 1,855.7

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CM4X16GE2133C13K8 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 28
读取速度，GB/s

4,168.0 16.1
写入速度，GB/s

1,855.7 12.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

680 3266

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5173DB0-YK0 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

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Kingston 9965662-009.A00G 16GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200

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Kingston KHX318C10FR/8G 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB