Kingston KHX318C10FR/8G 8GB vs Crucial Technology CT8G4SFRA266.C8FE 8GB

总分

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

总分

Crucial Technology CT8G4SFRA266.C8FE 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

差异规格评论

差异

Kingston KHX318C10FR/8G 8GB

需要考虑的原因
Kingston KHX318C10FR/8G 8GB

报告一个错误

Crucial Technology CT8G4SFRA266.C8FE 8GB

需要考虑的原因
Crucial Technology CT8G4SFRA266.C8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

42 60

左右 -43% 更低的延时
更快的读取速度，GB/s

14.7 6.8

测试中的平均数值
更快的写入速度，GB/s

10.8 5.4

测试中的平均数值
更高的内存带宽，mbps

21300 14900

左右 1.43 更高的带宽

规格

完整的技术规格清单

Kingston KHX318C10FR/8G 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

60 42
读取速度，GB/s

6.8 14.7
写入速度，GB/s

5.4 10.8
内存带宽，mbps

14900 21300

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-10-9-28 / 1866 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1411 2476

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

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Kingston ACR512X64D3S13C9G 4GB

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Gloway International Co. Ltd. STK4U2400D17082C 8GB

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Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173CB0-YK0 4GB

Samsung M471B5173CB0-YK0 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Kingston K9CXF2-MIE 8GB

Kingston K9CXF2-MIE 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N