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Kreton Corporation 51624xxxx68x35xxxx 2GB
Golden Empire CL16-18-18 D4-3400 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Golden Empire CL16-18-18 D4-3400 4GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Golden Empire CL16-18-18 D4-3400 4GB

Golden Empire CL16-18-18 D4-3400 4GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.4
    测试中的平均数值
Golden Empire CL16-18-18 D4-3400 4GB 需要考虑的原因
Golden Empire CL16-18-18 D4-3400 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 59
    左右 -127% 更低的延时
  • 更快的写入速度，GB/s
    11.2 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Golden Empire CL16-18-18 D4-3400 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 26
  • 读取速度，GB/s
    4,168.0 left arrow 14.4
  • 写入速度，GB/s
    1,855.7 left arrow 11.2
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    680 left arrow 2846

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Golden Empire CL16-18-18 D4-3400 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Golden Empire CL16-18-18 D4-3400 4GB
Golden Empire CL16-18-18 D4-3400 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA82GU6JJR8N-VK 16GB
SK Hynix HMA82GU6JJR8N-VK 16GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. W-MEM2666S416G 16GB
Wilk Elektronik S.A. W-MEM2666S416G 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Corsair CMW32GX4M4C3000C15 8GB
Corsair CMW32GX4M4C3000C15 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2400C15-8GNS 8GB
G Skill Intl F4-2400C15-8GNS 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston 9905712-010.A00G 16GB
Kingston 9905712-010.A00G 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Kingston 9905630-025.A00G 8GB
Kingston 9905630-025.A00G 8GB
内存RAM
Crucial Technology CT25664BA1339.M8FK 2GB
Crucial Technology CT25664BA1339.M8FK 2GB
Apacer Technology GD2.1527WT.001 8GB
Apacer Technology GD2.1527WT.001 8GB
内存RAM