RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kreton Corporation 51624xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.6
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 59
    左右 -119% 更低的延时
  • 更快的写入速度，GB/s
    11.3 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 27
  • 读取速度，GB/s
    4,168.0 left arrow 15.6
  • 写入速度，GB/s
    1,855.7 left arrow 11.3
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    680 left arrow 2687

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB RAM的比较

Crucial Technology CT51264BD160B.C16F 4GB
SpecTek Incorporated PSD34G13332 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905665-017.A00G 4GB
Kingston 9905665-017.A00G 4GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Corsair CMK16GX4M2B3466C16 8GB
Corsair CMK16GX4M2B3466C16 8GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
G Skill Intl F4-3000C16-16GTRG 16GB
G Skill Intl F4-3000C16-16GTRG 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C14-8GTZSW 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Corsair CM4X16GC3200C16K4 16GB
Corsair CM4X16GC3200C16K4 16GB
内存RAM
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Tanbassh 8G 2666MHZ 8GB
Tanbassh 8G 2666MHZ 8GB
内存RAM
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMSX8GX4M2A2666C18 4GB
Corsair CMSX8GX4M2A2666C18 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kingston 9905678-121.A00G 8GB
Kingston 9905678-121.A00G 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMK128GX4M4D3600C18 32GB
Corsair CMK128GX4M4D3600C18 32GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hyundai Inc AR32C16S8K2HU416R 8GB
Hyundai Inc AR32C16S8K2HU416R 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Kingston 9905702-137.A00G 8GB
Kingston 9905702-137.A00G 8GB
内存RAM