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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-3600C18-8GTZRX 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs G Skill Intl F4-3600C18-8GTZRX 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
G Skill Intl F4-3600C18-8GTZRX 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3600C18-8GTZRX 8GB
报告一个错误
更快的读取速度,GB/s
18.3
13.4
测试中的平均数值
更快的写入速度,GB/s
15.3
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-3600C18-8GTZRX 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
29
读取速度,GB/s
13.4
18.3
写入速度,GB/s
9.0
15.3
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2423
3555
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
G Skill Intl F4-3600C18-8GTZRX 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DDR4 2400 16GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3600C18-8GTZRX 8GB
SpecTek Incorporated PSD34G13332 4GB
Kingston 9965662-004.A00G 16GB
Kingston 9965433-406.A00LF 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9905702-121.A00G 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
EVGA 16G-D4-2400-MR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/8G 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C16-8GTRG 8GB
Kingston 9965525-018.A00LF 4GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston ACR24D4S7S8MB-8 8GB
Samsung 1600 CL10 Series 8GB
Mushkin MR[A/B]4U320LLLM8G 8GB
报告一个错误
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Bug description
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