Samsung 1600 CL10 Series 8GB vs Mushkin MR[A/B]4U320LLLM8G 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Mushkin MR[A/B]4U320LLLM8G 8GB

Mushkin MR[A/B]4U320LLLM8G 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

Mushkin MR[A/B]4U320LLLM8G 8GB

需要考虑的原因
Mushkin MR[A/B]4U320LLLM8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 25

左右 -14% 更低的延时
更快的读取速度，GB/s

18.1 16.1

测试中的平均数值
更快的写入速度，GB/s

13.5 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Mushkin MR[A/B]4U320LLLM8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 22
读取速度，GB/s

16.1 18.1
写入速度，GB/s

10.1 13.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 3256

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5273DH0-CH9 4GB

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Micron Technology TEAMGROUP-UD4-2133 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-3000C15-4GRR 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

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G Skill Intl F4-2400C17-8GISM 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

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G Skill Intl F4-4400C19-8GTZSW 8GB

Kingston 9905471-002.A00LF 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingston 99U5700-010.A00G 8GB