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Kreton Corporation 51624xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.3
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 59
    左右 -136% 更低的延时
  • 更快的写入速度，GB/s
    12.7 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 25
  • 读取速度，GB/s
    4,168.0 left arrow 15.3
  • 写入速度，GB/s
    1,855.7 left arrow 12.7
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    680 left arrow 2704

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB RAM的比较

Kingston 99U5428-040.A00LF 4GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Samsung M393A2G40DB1-CRC 16GB
Samsung M393A2G40DB1-CRC 16GB
内存RAM
Apacer Technology 75.A73AA.G03 2GB
Apacer Technology 75.A73AA.G03 2GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Corsair CMK8GX4M2B4133C19 4GB
Corsair CMK8GX4M2B4133C19 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3000C15-8GVKB 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Panram International Corporation W4U2133PS-8G 8GB
Panram International Corporation W4U2133PS-8G 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905624-019.A00G 8GB
Kingston 9905624-019.A00G 8GB
内存RAM