Kreton Corporation 51624xxxx68x35xxxx 2GB vs Micron Technology 16GB 2133MHz DIMM 16GB

总分

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

差异规格评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB

需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB

报告一个错误

更快的读取速度，GB/s

4 17.3

测试中的平均数值

Micron Technology 16GB 2133MHz DIMM 16GB

需要考虑的原因
Micron Technology 16GB 2133MHz DIMM 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 59

左右 -157% 更低的延时
更快的写入速度，GB/s

13.2 1,855.7

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Kreton Corporation 51624xxxx68x35xxxx 2GB

Micron Technology 16GB 2133MHz DIMM 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 23
读取速度，GB/s

4,168.0 17.3
写入速度，GB/s

1,855.7 13.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

680 3233

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

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King Tiger Technology Tigo-2400MHz-4G 4GB

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Samsung M4 70T2864QZ3-CE6 1GB

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Essencore Limited IM4AGU88N26-GIIHA0 16GB

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Nanya Technology M2X4G64CB88CHN-DG 4GB

Crucial Technology CT4G4SFS8213.C8FDD2 4GB

Crucial Technology CT4G4SFS8213.C8FDD2 4GB