Samsung M393B1G70BH0-CK0 8GB vs Essencore Limited IM4AGU88N24-FFFHMB 16GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Essencore Limited IM4AGU88N24-FFFHMB 16GB

Essencore Limited IM4AGU88N24-FFFHMB 16GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

51 68

左右 25% 更低的延时
更快的写入速度，GB/s

8.1 7.4

测试中的平均数值

Essencore Limited IM4AGU88N24-FFFHMB 16GB

需要考虑的原因
Essencore Limited IM4AGU88N24-FFFHMB 16GB

报告一个错误

更快的读取速度，GB/s

15.5 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Essencore Limited IM4AGU88N24-FFFHMB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 68
读取速度，GB/s

9.8 15.5
写入速度，GB/s

8.1 7.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2208 1826

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3733C17-8GTZSW 8GB

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Essencore Limited IM4AGU88N24-FFFHMB 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingston 9905403-061.A00LF 2GB

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G Skill Intl F4-2133C15-4GVK 4GB

G Skill Intl F4-2133C15-4GVK 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

A-DATA Technology AD73I1B1672EG 2GB

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Kingston 9905471-002.A00LF 2GB

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Chun Well Technology Holding Limited CL16-18-18 D4-2666

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SK Hynix HMT451S6BFR8A-PB 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB