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Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology AFLD48VH1P 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Micron Technology AFLD48VH1P 8GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Micron Technology AFLD48VH1P 8GB

Micron Technology AFLD48VH1P 8GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.7
    测试中的平均数值
Micron Technology AFLD48VH1P 8GB 需要考虑的原因
Micron Technology AFLD48VH1P 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 59
    左右 -146% 更低的延时
  • 更快的写入速度，GB/s
    11.4 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology AFLD48VH1P 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 24
  • 读取速度，GB/s
    4,168.0 left arrow 15.7
  • 写入速度，GB/s
    1,855.7 left arrow 11.4
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    680 left arrow 2773

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Micron Technology AFLD48VH1P 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
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Kingston 9965600-018.A00G 16GB
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Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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Kingston KYXC0V-MIH 16GB
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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
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Apacer Technology 76.B305G.D500B 4GB
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Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
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Apacer Technology 78.CAGP7.C7Z0B 8GB
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G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
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Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
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SK Hynix HYMP112U64CP8-S5 1GB
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G Skill Intl F4-3200C16-16GTZSW 16GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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SK Hynix HMA82GS6CJR8N-V-V 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
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Kingston CBD24D4S7D8MA-16 16GB
内存RAM
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SK Hynix DDR2 800 2G 2GB
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Kingston MSI24D4U7D8MH-16 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
内存RAM