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Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M393A4K40CB2-CTD 32GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Samsung M393A4K40CB2-CTD 32GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Samsung M393A4K40CB2-CTD 32GB

Samsung M393A4K40CB2-CTD 32GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
Samsung M393A4K40CB2-CTD 32GB 需要考虑的原因
Samsung M393A4K40CB2-CTD 32GB
报告一个错误
  • 更快的读取速度，GB/s
    9.1 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.2 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M393A4K40CB2-CTD 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 59
  • 读取速度，GB/s
    4,168.0 left arrow 9.1
  • 写入速度，GB/s
    1,855.7 left arrow 7.2
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    680 left arrow 2025

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Samsung M393A4K40CB2-CTD 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M393A4K40CB2-CTD 32GB
Samsung M393A4K40CB2-CTD 32GB
内存RAM
Kingston K531R8-MIN 4GB
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Golden Empire CL16-16-16 D4-3200 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
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内存RAM
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内存RAM
AMD AE34G1601U1 4GB
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内存RAM
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G Skill Intl F4-4266C19-8GTZR 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
内存RAM
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Corsair CMW16GX4M2E3200C16 8GB
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内存RAM
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内存RAM
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Samsung M393B2G70BH0-CH9 16GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
内存RAM
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内存RAM
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A-DATA Technology DDR3 1600 4GB
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V-GEN D4S8GL30A8TS5 8GB
内存RAM