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Samsung M378A5244CB0-CTD 4GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Samsung M378A5244CB0-CTD 4GB vs Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

差异 规格 评论

差异

Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 15.5
    测试中的平均数值
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 36
    左右 -20% 更低的延时
  • 更快的写入速度，GB/s
    12.9 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A5244CB0-CTD 4GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 30
  • 读取速度，GB/s
    15.8 left arrow 15.5
  • 写入速度，GB/s
    11.8 left arrow 12.9
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2497 left arrow 3044

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 99U5474-028.A00LF 4GB
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内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
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Mushkin 99[2/7/4]190F 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
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Kreton Corporation 51624xxxx68x35xxxx 2GB
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TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Kingston 9965589-007.D01G 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
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Corsair CMK32GX4M4A2400C16 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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G Skill Intl F4-3600C19-16GTRS 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
内存RAM
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Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
内存RAM
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内存RAM
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Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-2133C15-4GNT 4GB
G Skill Intl F4-2133C15-4GNT 4GB
内存RAM