Lexar Co Limited LD4AU016G-H3200GST 16GB vs A-DATA Technology DDR4 3000 8GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

A-DATA Technology DDR4 3000 8GB

A-DATA Technology DDR4 3000 8GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

17.8 17

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

A-DATA Technology DDR4 3000 8GB

需要考虑的原因
A-DATA Technology DDR4 3000 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 33

左右 -10% 更低的延时
更快的写入速度，GB/s

13.4 12.5

测试中的平均数值

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

A-DATA Technology DDR4 3000 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 30
读取速度，GB/s

17.8 17.0
写入速度，GB/s

12.5 13.4
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3285 3272

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Samsung M393A4K40BB2-CTD 32GB

Samsung M393A4K40BB2-CTD 32GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Corsair CMD8GX4M2B3600C18 4GB

Corsair CMD8GX4M2B3600C18 4GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Kingston 9905702-136.A00G 8GB

Kingston 9905702-136.A00G 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Samsung M386A4K40BB0-CRC 32GB

Samsung M386A4K40BB0-CRC 32GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

UMAX Technology 16GB

UMAX Technology 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston HP26D4U9D8HC-16X 16GB

Kingston HP26D4U9D8HC-16X 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G

OCZ OCZ2V8002G 2GB

OCZ OCZ2V8002G 2GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB