Lexar Co Limited LD4AU016G-H3200GST 16GB vs Corsair CMK32GX4M4A2400C12 8GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Corsair CMK32GX4M4A2400C12 8GB

Corsair CMK32GX4M4A2400C12 8GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

17.8 14.8

测试中的平均数值
更快的写入速度，GB/s

12.5 10.9

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Corsair CMK32GX4M4A2400C12 8GB

需要考虑的原因
Corsair CMK32GX4M4A2400C12 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 33

左右 -27% 更低的延时

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Corsair CMK32GX4M4A2400C12 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 26
读取速度，GB/s

17.8 14.8
写入速度，GB/s

12.5 10.9
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3285 2849

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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G Skill Intl F4-3000C14-8GTZ 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 99U5471-030.A00LF 8GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Kingston 9965525-018.A00LF 4GB

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AMD R744G2400U1S-UO 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Crucial Technology CT4G4DFS824A.M8FF 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB