Lexar Co Limited LD4AU016G-H3200GST 16GB vs Corsair CMSX32GX4M2A3000C16 16GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Corsair CMSX32GX4M2A3000C16 16GB

Corsair CMSX32GX4M2A3000C16 16GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

17.8 17.3

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Corsair CMSX32GX4M2A3000C16 16GB

需要考虑的原因
Corsair CMSX32GX4M2A3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 33

左右 -6% 更低的延时
更快的写入速度，GB/s

13.9 12.5

测试中的平均数值

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Corsair CMSX32GX4M2A3000C16 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 31
读取速度，GB/s

17.8 17.3
写入速度，GB/s

12.5 13.9
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3285 3359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

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Micron Technology 18ASF1G72PDZ-2G6B1 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

SK Hynix HMA425S6AFR6N-UH 2GB

SK Hynix HMA425S6AFR6N-UH 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Corsair CMD32GX4M2B3466C16 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

G Skill Intl F4-4000C17-16GTRSB 16GB

G Skill Intl F4-4000C17-16GTRSB 16GB