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Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 9905625-036.A00G 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Kingston 9905625-036.A00G 16GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Kingston 9905625-036.A00G 16GB

Kingston 9905625-036.A00G 16GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Kingston 9905625-036.A00G 16GB 需要考虑的原因
Kingston 9905625-036.A00G 16GB
报告一个错误

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 9905625-036.A00G 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 33
  • 读取速度，GB/s
    17.8 left arrow 14.2
  • 写入速度，GB/s
    12.5 left arrow 9.4
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 2494

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905625-036.A00G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 9905625-036.A00G 16GB
Kingston 9905625-036.A00G 16GB
内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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SK Hynix HMA81GS6CJR8N-UH 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Mushkin MR[ABC]4U360JNNM16G 16GB
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Corsair CMZ16GX3M2A1866C9 8GB
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Kingston 9905403-134.A00LF 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
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Kingston 9905471-006.A00LF 4GB
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AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
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Micron Technology 16ATF2G64HZ-2G3B1 16GB
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Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
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Corsair CMV4GX4M1A2666C18 4GB
内存RAM
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Kingston 99U5471-056.A00LF 8GB
AMD R948G3206U2S 8GB
AMD R948G3206U2S 8GB
内存RAM
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Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMU32GX4M2C3200C16 16GB
Corsair CMU32GX4M2C3200C16 16GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
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Corsair CMD32GX4M4B2800C14 8GB
内存RAM
SK Hynix HMA84GR7AFR4N-UH 32GB
SK Hynix HMA84GR7AFR4N-UH 32GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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G Skill Intl F4-2666C15-8GVR 8GB
内存RAM