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Lexar Co Limited LD4AU016G-H3200GST 16GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 38
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 15
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Micron Technology 16ATF2G64AZ-2G6E1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6E1 16GB
报告一个错误

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 38
  • 读取速度，GB/s
    17.8 left arrow 15.0
  • 写入速度，GB/s
    12.5 left arrow 12.5
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 3005

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 16ATF2G64AZ-2G6E1 16GB RAM的比较

PNY Electronics PNY 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK128GX4M4A2666C16 32GB
Corsair CMK128GX4M4A2666C16 32GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
Corsair CMK32GX4M4B3600C16 8GB
Corsair CMK32GX4M4B3600C16 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
V-GEN D4H8GL36A8TXV 8GB
V-GEN D4H8GL36A8TXV 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMR32GX4M2C3200C16 16GB
Corsair CMR32GX4M2C3200C16 16GB
内存RAM
Kingston 99U5471-025.A00LF 4GB
Kingston 99U5471-025.A00LF 4GB
G Skill Intl F4-3600C18-16GTZR 16GB
G Skill Intl F4-3600C18-16GTZR 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9965667-001.A00G 16GB
Kingston 9965667-001.A00G 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMT16GX4M2C3200C16 8GB
Corsair CMT16GX4M2C3200C16 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-2800C16-8GVG 8GB
G Skill Intl F4-2800C16-8GVG 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
内存RAM