Lexar Co Limited LD4AU016G-H3200GST 16GB vs Micron Technology 16ATF2G64HZ-2G6J1 16GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 38

左右 13% 更低的延时
更快的读取速度，GB/s

17.8 15.2

测试中的平均数值
更快的写入速度，GB/s

12.5 11.4

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Micron Technology 16ATF2G64HZ-2G6J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6J1 16GB

报告一个错误

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 38
读取速度，GB/s

17.8 15.2
写入速度，GB/s

12.5 11.4
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3285 2821

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Panram International Corporation PUD42133C138G4NJK 8GB

Panram International Corporation PUD42133C138G4NJK 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-3200C14-16GTZSK 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston 9905744-067.A00G 32GB

Kingston 9905744-067.A00G 32GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Mushkin MR[A/B]4U360JNNM8G 8GB

Mushkin MR[A/B]4U360JNNM8G 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3600C19-16GSXK 16GB

G Skill Intl F4-3600C19-16GSXK 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Crucial Technology BLS8G4D26BFSTK.8FD 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK16GX4M1E3200C16 16GB

Corsair CMK16GX4M1E3200C16 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-2666C15-16GVR 16GB

G Skill Intl F4-2666C15-16GVR 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB