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Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung M393A8K40B21-CTC 64GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Samsung M393A8K40B21-CTC 64GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Samsung M393A8K40B21-CTC 64GB

Samsung M393A8K40B21-CTC 64GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 39
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Samsung M393A8K40B21-CTC 64GB 需要考虑的原因
Samsung M393A8K40B21-CTC 64GB
报告一个错误

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung M393A8K40B21-CTC 64GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 39
  • 读取速度，GB/s
    17.8 left arrow 8.9
  • 写入速度，GB/s
    12.5 left arrow 6.8
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 2011

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M393A8K40B21-CTC 64GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMK128GX4M8A2666C16 16GB
Corsair CMK128GX4M8A2666C16 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung M393A8K40B21-CTC 64GB
Samsung M393A8K40B21-CTC 64GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Heoriady M471A1K43CB1-CTD 8GB
Heoriady M471A1K43CB1-CTD 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Samsung M393A4K40BB1-CRC 32GB
Samsung M393A4K40BB1-CRC 32GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Transcend Information JM3200HLE-32G 32GB
Transcend Information JM3200HLE-32G 32GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
内存RAM
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Nanya Technology M2S4G64CB8HB5N-CG 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Gloway International (HK) STK4U2400D17041C 4GB
Gloway International (HK) STK4U2400D17041C 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston ACR26D4S9S1KA-4 4GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston HP24D4S7S8MBP-8 8GB
Kingston HP24D4S7S8MBP-8 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK64GX4M4B3200C16 16GB
Corsair CMK64GX4M4B3200C16 16GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Samsung M393A1G40EB1-CRC 8GB
Samsung M393A1G40EB1-CRC 8GB
内存RAM