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Lexar Co Limited LD4AU016G-H3200GST 16GB
Smart Modular SF4641G8CK8I8GKSBG 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Smart Modular SF4641G8CK8I8GKSBG 8GB

总分
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分
star star star star star
Smart Modular SF4641G8CK8I8GKSBG 8GB

Smart Modular SF4641G8CK8I8GKSBG 8GB

差异 规格 评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB 需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 35
    左右 6% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 11.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Smart Modular SF4641G8CK8I8GKSBG 8GB 需要考虑的原因
Smart Modular SF4641G8CK8I8GKSBG 8GB
报告一个错误

规格

完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 35
  • 读取速度，GB/s
    17.8 left arrow 16.0
  • 写入速度，GB/s
    12.5 left arrow 11.8
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3285 left arrow 2824

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB

Smart Modular SF4641G8CK8I8GKSBG 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 9905701-143.A00G 16GB
Kingston 9905701-143.A00G 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Corsair CM4X8GF2133C15S2 8GB
Corsair CM4X8GF2133C15S2 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-5066C20-8GVK 8GB
G Skill Intl F4-5066C20-8GVK 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Samsung M471A1K1KBB1-CRC 8GB
Samsung M471A1K1KBB1-CRC 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston KHX2400C14/16G 16GB
Kingston KHX2400C14/16G 16GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Corsair CM4X16GD3200C16K4E 16GB
Corsair CM4X16GD3200C16K4E 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMD32GX4M4E4000C19 8GB
Corsair CMD32GX4M4E4000C19 8GB
内存RAM