Micron Technology 16JSF25664HZ-1G1F1 2GB vs A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 26% 更低的延时

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

需要考虑的原因
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

报告一个错误

更快的读取速度，GB/s

15.9 10.5

测试中的平均数值
更快的写入速度，GB/s

12.3 7.1

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 39
读取速度，GB/s

10.5 15.9
写入速度，GB/s

7.1 12.3
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1425 2878

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

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Kingston 9905678-033.A00G 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB