RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMSO16GX4M1A2133C15 16GB
比较
Micron Technology 16JSF25664HZ-1G1F1 2GB vs Corsair CMSO16GX4M1A2133C15 16GB
总分
Micron Technology 16JSF25664HZ-1G1F1 2GB
总分
Corsair CMSO16GX4M1A2133C15 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB
报告一个错误
低于PassMark测试中的延时,ns
29
35
左右 17% 更低的延时
需要考虑的原因
Corsair CMSO16GX4M1A2133C15 16GB
报告一个错误
更快的读取速度,GB/s
13.7
10.5
测试中的平均数值
更快的写入速度,GB/s
9.6
7.1
测试中的平均数值
更高的内存带宽,mbps
17000
8500
左右 2 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMSO16GX4M1A2133C15 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
35
读取速度,GB/s
10.5
13.7
写入速度,GB/s
7.1
9.6
内存带宽,mbps
8500
17000
Other
描述
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1425
2636
Micron Technology 16JSF25664HZ-1G1F1 2GB RAM的比较
Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Corsair CMSO16GX4M1A2133C15 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMD16GX3M2A1866C9 8GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905624-022.A00G 8GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Kingston 99U5584-007.A00LF 4GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
PNY Electronics PNY 2GB
Transcend Information JM3200HLB-8G 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Samsung M471B5173BH0-CK0 4GB
Corsair CMW32GX4M2C3466C16 16GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Transcend Information TS512MLH64V1H 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-4266C19-8GTZA 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston 99U5701-036.A00G 16GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M393A1G40DB0-CPB 8GB
Kingston HX432C15PB3/16 16GB
Kingston KHX1600C9S3L/4G 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
报告一个错误
×
Bug description
Source link