Micron Technology 16JSF25664HZ-1G1F1 2GB vs Crucial Technology CT4G4DFS824A.C8FBR2 4GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 29

左右 -26% 更低的延时
更快的读取速度，GB/s

16.1 10.5

测试中的平均数值
更快的写入速度，GB/s

10.1 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 23
读取速度，GB/s

10.5 16.1
写入速度，GB/s

7.1 10.1
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1425 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Apacer Technology 78.CAGMR.40C0B 8GB

Apacer Technology 78.CAGMR.40C0B 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-2133C15-16GIS 16GB

G Skill Intl F4-2133C15-16GIS 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Ramaxel Technology RMSA3260ME78HAF-2666 8GB

Ramaxel Technology RMSA3260ME78HAF-2666 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB