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Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3600C16-16GTRS 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs G Skill Intl F4-3600C16-16GTRS 16GB

总分
star star star star star
Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分
star star star star star
G Skill Intl F4-3600C16-16GTRS 16GB

G Skill Intl F4-3600C16-16GTRS 16GB

差异 规格 评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB 需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB
报告一个错误
G Skill Intl F4-3600C16-16GTRS 16GB 需要考虑的原因
G Skill Intl F4-3600C16-16GTRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.2 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3600C16-16GTRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 28
  • 读取速度，GB/s
    10.5 left arrow 18.0
  • 写入速度，GB/s
    7.1 left arrow 16.2
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1425 left arrow 3933

Micron Technology 16JSF25664HZ-1G1F1 2GB RAM的比较

Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

G Skill Intl F4-3600C16-16GTRS 16GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-3000C15-8GVGB 8GB
G Skill Intl F4-3000C15-8GVGB 8GB
内存RAM
SK Hynix HMT451S6AFR8A-PB 4GB
SK Hynix HMT451S6AFR8A-PB 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMD16GX4M4B3200C15 4GB
Corsair CMD16GX4M4B3200C15 4GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Kingston KHX2133C15S4/8G 8GB
Kingston KHX2133C15S4/8G 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA81GU6CJR8N-VK 8GB
SK Hynix HMA81GU6CJR8N-VK 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston CBD26D4S9D8ME-16 16GB
Kingston CBD26D4S9D8ME-16 16GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Golden Empire CL16-16-16 D4-3000 4GB
Golden Empire CL16-16-16 D4-3000 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M3 93T2950EZ3-CCC 1GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Corsair CMWX8GD3600C18W2D 8GB
Corsair CMWX8GD3600C18W2D 8GB
内存RAM
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Asgard VMA45UG-MIC1U22T2 8GB
Asgard VMA45UG-MIC1U22T2 8GB
内存RAM