Micron Technology 16JSF25664HZ-1G1F1 2GB vs Golden Empire CL17-17-17 D4-2400 16GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 30

左右 3% 更低的延时

Golden Empire CL17-17-17 D4-2400 16GB

需要考虑的原因
Golden Empire CL17-17-17 D4-2400 16GB

报告一个错误

更快的读取速度，GB/s

16.5 10.5

测试中的平均数值
更快的写入速度，GB/s

11.2 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Golden Empire CL17-17-17 D4-2400 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 30
读取速度，GB/s

10.5 16.5
写入速度，GB/s

7.1 11.2
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1425 2951

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16G

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

Mushkin 991586 2GB

Mushkin 991586 2GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3000C16-16GSXWB 16GB

G Skill Intl F4-3000C16-16GSXWB 16GB