Micron Technology 8JSF25664HZ-1G4D1 2GB vs Samsung M378A1K43BB1-CRC 8GB

总分

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

差异规格评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB

需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB

报告一个错误

Samsung M378A1K43BB1-CRC 8GB

需要考虑的原因
Samsung M378A1K43BB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 41

左右 -86% 更低的延时
更快的读取速度，GB/s

15.9 10.7

测试中的平均数值
更快的写入速度，GB/s

9.5 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Micron Technology 8JSF25664HZ-1G4D1 2GB

Samsung M378A1K43BB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 22
读取速度，GB/s

10.7 15.9
写入速度，GB/s

7.5 9.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1335 2611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A2K43EB1-CWE 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Apacer Technology 78.C2GF2.AU00B 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Samsung M378A5143DB0-CPB 4GB

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Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

Corsair CMK32GX4M2A2400C14 16GB

Corsair CMK32GX4M2A2400C14 16GB