Micron Technology 16JSF25664HZ-1G1F1 2GB vs OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 54

左右 46% 更低的延时

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

需要考虑的原因
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

报告一个错误

更快的读取速度，GB/s

15.2 10.5

测试中的平均数值
更快的写入速度，GB/s

14.3 7.1

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 54
读取速度，GB/s

10.5 15.2
写入速度，GB/s

7.1 14.3
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1425 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G30C15U4B.M8FE 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB

Hexon Technology Pte Ltd HEXON 1GB

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Samsung M378B5173BH0-CH9 4GB

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Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Corsair CMT16GX4M2C3200C14 8GB

Corsair CMT16GX4M2C3200C14 8GB