Micron Technology 16JSF25664HZ-1G1F1 2GB vs Samsung M386A8K40BM1-CRC 64GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Samsung M386A8K40BM1-CRC 64GB

Samsung M386A8K40BM1-CRC 64GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 34

左右 15% 更低的延时
更快的读取速度，GB/s

10.5 10.4

测试中的平均数值

Samsung M386A8K40BM1-CRC 64GB

需要考虑的原因
Samsung M386A8K40BM1-CRC 64GB

报告一个错误

更快的写入速度，GB/s

7.5 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M386A8K40BM1-CRC 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 34
读取速度，GB/s

10.5 10.4
写入速度，GB/s

7.1 7.5
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1425 2297

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G30C15U4W.M8FE 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston 99U5700-014.A00G 8GB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMD8GX4M2B4000C19 4GB

Corsair CMD8GX4M2B4000C19 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

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Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB