Micron Technology 16JSF25664HZ-1G1F1 2GB vs Samsung M471A2K43BB1-CPB 16GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 24% 更低的延时

Samsung M471A2K43BB1-CPB 16GB

需要考虑的原因
Samsung M471A2K43BB1-CPB 16GB

报告一个错误

更快的读取速度，GB/s

13.6 10.5

测试中的平均数值
更快的写入速度，GB/s

9.2 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M471A2K43BB1-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 38
读取速度，GB/s

10.5 13.6
写入速度，GB/s

7.1 9.2
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1425 2434

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Avant Technology W641GU67J5213N8 8GB

Avant Technology W641GU67J5213N8 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

Kingston K1N7HK-HYC 2GB

Kingston K1N7HK-HYC 2GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Crucial Technology CT16G4DFD824A.C16FJ 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB