Micron Technology 16JSF25664HZ-1G1F1 2GB vs Transcend Information JM3200HLB-8G 8GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Transcend Information JM3200HLB-8G 8GB

Transcend Information JM3200HLB-8G 8GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

Transcend Information JM3200HLB-8G 8GB

需要考虑的原因
Transcend Information JM3200HLB-8G 8GB

报告一个错误

更快的读取速度，GB/s

15.1 10.5

测试中的平均数值
更快的写入速度，GB/s

11.5 7.1

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Transcend Information JM3200HLB-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 29
读取速度，GB/s

10.5 15.1
写入速度，GB/s

7.1 11.5
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1425 2950

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3200C14-8GTZRX 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

V-GEN D4S8GL32A8TS 8GB

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Samsung M393B2G70BH0-CK0 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

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Corsair CMW64GX4M4Z2933C16 16GB

Corsair CMW64GX4M4Z2933C16 16GB