Micron Technology 16JTF1G64AZ-1G6E1 8GB vs Crucial Technology BLS8G4S240FSD.16FBD2 8GB

总分

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

总分

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

差异规格评论

差异

Micron Technology 16JTF1G64AZ-1G6E1 8GB

需要考虑的原因
Micron Technology 16JTF1G64AZ-1G6E1 8GB

报告一个错误

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSD.16FBD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

16.4 14.4

测试中的平均数值
更快的写入速度，GB/s

12.8 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

14.4 16.4
写入速度，GB/s

9.0 12.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2422 2928

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor GLAF62F-D8---------- 4GB

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Samsung M471B5173QH0-YK0 4GB

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Team Group Inc. DDR4 3600 8GB

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Essencore Limited KD44GU481-26N1600 4GB

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G Skill Intl F4-3600C18-8GTZRX 8GB

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Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

Kingston 99U5471-020.A00LF 4GB

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Corsair CMD32GX4M4A2400C14 8GB

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G Skill Intl F4-4800C18-8GTRG 8GB

G Skill Intl F4-4800C18-8GTRG 8GB