Micron Technology 16JTF25664AZ-1G4F1 2GB vs A-DATA Technology DDR4 3200 8GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

A-DATA Technology DDR4 3200 8GB

需要考虑的原因
A-DATA Technology DDR4 3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 40

左右 -29% 更低的延时
更快的读取速度，GB/s

18.2 13.6

测试中的平均数值
更快的写入速度，GB/s

14.3 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

A-DATA Technology DDR4 3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 31
读取速度，GB/s

13.6 18.2
写入速度，GB/s

8.3 14.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2035 3439

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2666C13D4/4GX 4GB

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PNY Electronics PNY 2GB

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Samsung M471B5173QH0-YK0 4GB

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Corsair CMT32GX4M2Z3600C18 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

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Kingston 99U5595-005.A00LF 2GB

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Kingston KHX1600C9D3/4G 4GB

Corsair CMD64GX4M4B3466C16 16GB

Corsair CMD64GX4M4B3466C16 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

G Skill Intl F4-2133C15-16GFX 16GB

G Skill Intl F4-2133C15-16GFX 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

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G Skill Intl F4-4266C19-8GTZR 8GB