Micron Technology 16JTF25664AZ-1G4F1 2GB vs Corsair CMD8GX4M2B3200C16 4GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

Corsair CMD8GX4M2B3200C16 4GB

Corsair CMD8GX4M2B3200C16 4GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

Corsair CMD8GX4M2B3200C16 4GB

需要考虑的原因
Corsair CMD8GX4M2B3200C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 40

左右 -67% 更低的延时
更快的读取速度，GB/s

19.5 13.6

测试中的平均数值
更快的写入速度，GB/s

16.3 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

Corsair CMD8GX4M2B3200C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 24
读取速度，GB/s

13.6 19.5
写入速度，GB/s

8.3 16.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2035 3718

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C18-16GTRG 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Corsair CMK8GX4M2B3200C16 4GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

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G Skill Intl F4-3600C18-32GTZR 32GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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SK Hynix HMA851S6AFR6N-UH 4GB

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Kingston 9965525-140.A00LF 8GB

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SK Hynix DDR2 800 2G 2GB

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Samsung M391A1K43BB1-CRC 8GB