RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
比较
Samsung M378B5273CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
总分
Samsung M378B5273CH0-CH9 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5273CH0-CH9 4GB
报告一个错误
低于PassMark测试中的延时,ns
37
60
左右 38% 更低的延时
更快的读取速度,GB/s
13.2
7.8
测试中的平均数值
更快的写入速度,GB/s
8.4
2.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M378B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
60
读取速度,GB/s
13.2
7.8
写入速度,GB/s
8.4
2.8
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2143
1505
Samsung M378B5273CH0-CH9 4GB RAM的比较
Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB RAM的比较
Samsung M393B1K70QB0-CK0 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston SMD4-S8G48HJ-26V 8GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CM4X8GE2400C15K4 8GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3000C16-16GSXWB 16GB
Kingston 99U5584-001.A00LF 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905702-184.A00G 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA42GR7MFR4N-TF 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMD16GX4M4B3200C16-R 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston XJV223-MIE-NX 16GB
Elpida EBJ41UF8BDW0-GN-F 4GB
G Skill Intl F4-2400C15-16GFX 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Transcend Information JM2666HLG-16GK 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2400C17-8GFT 8GB
报告一个错误
×
Bug description
Source link