Micron Technology 16JTF25664AZ-1G4F1 2GB vs Crucial Technology BLS16G4D240FSB.16FAD 16GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

Crucial Technology BLS16G4D240FSB.16FAD 16GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

Crucial Technology BLS16G4D240FSB.16FAD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSB.16FAD 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 40

左右 -33% 更低的延时
更快的读取速度，GB/s

17.4 13.6

测试中的平均数值
更快的写入速度，GB/s

12.9 8.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 30
读取速度，GB/s

13.6 17.4
写入速度，GB/s

8.3 12.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2035 3310

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Crucial Technology BLS16G4D240FSB.16FAD 16GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston HP698651-154-MCN 8GB

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SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Smart Modular SMS4WEC8C1K0446FCG 8GB

Smart Modular SMS4WEC8C1K0446FCG 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston 8ATF1G64HZ-2G3B2 8GB

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Kingston KF548C38-16 16GB

Crucial Technology CT8G4DFS8266.C8FE 8GB

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