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Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3200C18-8GRS 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs G Skill Intl F4-3200C18-8GRS 8GB

总分
star star star star star
Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分
star star star star star
G Skill Intl F4-3200C18-8GRS 8GB

G Skill Intl F4-3200C18-8GRS 8GB

差异 规格 评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB 需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB
报告一个错误
G Skill Intl F4-3200C18-8GRS 8GB 需要考虑的原因
G Skill Intl F4-3200C18-8GRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 40
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3200C18-8GRS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 29
  • 读取速度，GB/s
    13.6 left arrow 17.2
  • 写入速度，GB/s
    8.3 left arrow 13.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2035 left arrow 3199

Micron Technology 16JTF25664AZ-1G4F1 2GB RAM的比较

Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB

G Skill Intl F4-3200C18-8GRS 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3200C18-8GRS 8GB
G Skill Intl F4-3200C18-8GRS 8GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston KHX2400C14S4/16G 16GB
Kingston KHX2400C14S4/16G 16GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
INTENSO GKE800UD102408-2133 8GB
INTENSO GKE800UD102408-2133 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Avant Technology W642GU44J2320NC 16GB
Avant Technology W642GU44J2320NC 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905625-097.A00G 16GB
Kingston 9905625-097.A00G 16GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Mushkin MRA4S300GJJM16G 16GB
Mushkin MRA4S300GJJM16G 16GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Kingston 9965600-018.A00G 16GB
Kingston 9965600-018.A00G 16GB
内存RAM
Samsung M471B5273DH0-YK0 4GB
Samsung M471B5273DH0-YK0 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4000C17-16GTRGB 16GB
G Skill Intl F4-4000C17-16GTRGB 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
内存RAM