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Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs G Skill Intl F4-4000C18-8GTZKW 8GB

总分
star star star star star
Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分
star star star star star
G Skill Intl F4-4000C18-8GTZKW 8GB

G Skill Intl F4-4000C18-8GTZKW 8GB

差异 规格 评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB 需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB
报告一个错误
G Skill Intl F4-4000C18-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-4000C18-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 40
    左右 -54% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.8 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 26
  • 读取速度，GB/s
    13.6 left arrow 19.4
  • 写入速度，GB/s
    8.3 left arrow 16.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2035 left arrow 3899

Micron Technology 16JTF25664AZ-1G4F1 2GB RAM的比较

Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB

G Skill Intl F4-4000C18-8GTZKW 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB
G Skill Intl F4-4000C18-8GTZKW 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston 9905678-121.A00G 8GB
Kingston 9905678-121.A00G 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Transcend Information TS2GSH64V6B 16GB
Transcend Information TS2GSH64V6B 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMV4GX4M1A2666C18 4GB
Corsair CMV4GX4M1A2666C18 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Kingston 9965662-018.A00G 32GB
Kingston 9965662-018.A00G 32GB
内存RAM
SK Hynix HMA81GR7AFR8N-VK 8GB
SK Hynix HMA81GR7AFR8N-VK 8GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM