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Samsung 1600 CL10 Series 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB

Samsung 1600 CL10 Series 8GB vs Crucial Technology BL8G36C16U4W.M8FE1 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Crucial Technology BL8G36C16U4W.M8FE1 8GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 30
    左右 17% 更低的延时
Crucial Technology BL8G36C16U4W.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G36C16U4W.M8FE1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.6 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 30
  • 读取速度，GB/s
    16.1 left arrow 19.6
  • 写入速度，GB/s
    10.1 left arrow 15.5
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3432

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Crucial Technology BL8G36C16U4W.M8FE1 8GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-3333C16-8GTZSK 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Micron Technology 16G3200CL22 16GB
Micron Technology 16G3200CL22 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
SK Hynix HMA81GR7MFR8N-UH 8GB
SK Hynix HMA81GR7MFR8N-UH 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Panram International Corporation M424016 4GB
Panram International Corporation M424016 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Corsair CM4B8G7L2666A16K2-O 8GB
Corsair CM4B8G7L2666A16K2-O 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3733C17-4GTZ 4GB
G Skill Intl F4-3733C17-4GTZ 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM
Kingston 9905469-153.A00LF 4GB
Kingston 9905469-153.A00LF 4GB
Kingston RB26D4U9D8MEH-16 16GB
Kingston RB26D4U9D8MEH-16 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK16GX4M2K4333C19 8GB
Corsair CMK16GX4M2K4333C19 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Kingston XW21KG-MIE2 8GB
Kingston XW21KG-MIE2 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston KMKYF9-MIH 8GB
Kingston KMKYF9-MIH 8GB
内存RAM