Micron Technology 16JTF25664AZ-1G4F1 2GB vs G Skill Intl F4-4400C16-8GTRS 8GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

G Skill Intl F4-4400C16-8GTRS 8GB

G Skill Intl F4-4400C16-8GTRS 8GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

G Skill Intl F4-4400C16-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-4400C16-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 40

左右 -90% 更低的延时
更快的读取速度，GB/s

20.6 13.6

测试中的平均数值
更快的写入速度，GB/s

20.0 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

G Skill Intl F4-4400C16-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 21
读取速度，GB/s

13.6 20.6
写入速度，GB/s

8.3 20.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2035 4170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4400C16-8GTRS 8GB

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Mushkin 991988 (996988) 4GB

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Corsair CMR64GX4M4K3600C18 16GB

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Micron Technology 4ATF51264AZ-2G3B1 4GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

Wilk Elektronik S.A. IR2400D464L15S/8G 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Corsair CMK64GX4M4A2400C14 16GB

Corsair CMK64GX4M4A2400C14 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston KHX3600C18D4/16GX 16GB

Kingston KHX3600C18D4/16GX 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N