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Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
比较
Samsung 1600 CL10 Series 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
总分
Samsung 1600 CL10 Series 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
27
左右 7% 更低的延时
更快的读取速度,GB/s
16.1
15.3
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
报告一个错误
更快的写入速度,GB/s
11.2
10.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
27
读取速度,GB/s
16.1
15.3
写入速度,GB/s
10.1
11.2
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2764
2545
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA81GS6JJR8N-VK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingston KF552C40-16 16GB
Corsair CMK64GX4M2C3200C16 32GB
Kingston KVR800D2N6/2G 2GB
Corsair CMD64GX4M4B3000C15 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4400C16-8GTZR 8GB
Kingston 99U5474-023.A00LF 4GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
ASint Technology SLA302G08-GGNNG 4GB
Kingston KVT8FP-HYC 4GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3200C16-4GVK 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-2666C18-32GRS 32GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3466C16-4GTZ 4GB
Avant Technology F6451U64F9333G 4GB
Kingston ACR21D4S15HAG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Team Group Inc. TEAMGROUP-UD4-3733 8GB
Samsung M471B5173QH0-YK0 4GB
Avant Technology J642GU42J5213N1 16GB
AMD R538G1601U2S-UO 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Kingston 9965525-155.A00LF 8GB
Samsung M471A1K43CBCBCRC 8GB
报告一个错误
×
Bug description
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