Micron Technology 16JTF25664AZ-1G4F1 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 40

左右 -43% 更低的延时
更快的读取速度，GB/s

13.8 13.6

测试中的平均数值
更快的写入速度，GB/s

10.1 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 28
读取速度，GB/s

13.6 13.8
写入速度，GB/s

8.3 10.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2035 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 9905633-017.A00G 8GB

Kingston 9905633-017.A00G 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

SK Hynix HMA41GR7AFR8N-TF 8GB

SK Hynix HMA41GR7AFR8N-TF 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMK32GX4M2K4133C19 16GB

Corsair CMK32GX4M2K4133C19 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CMW16GX4M2C3466C16 8GB

Corsair CMW16GX4M2C3466C16 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMD64GX4M4B3000C15 16GB

Corsair CMD64GX4M4B3000C15 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB