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Micron Technology 16JTF25664AZ-1G4F1 2GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
比较
Micron Technology 16JTF25664AZ-1G4F1 2GB vs Lexar Co Limited LD4AS016G-H3200GST 16GB
总分
Micron Technology 16JTF25664AZ-1G4F1 2GB
总分
Lexar Co Limited LD4AS016G-H3200GST 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB
报告一个错误
低于PassMark测试中的延时,ns
40
44
左右 9% 更低的延时
需要考虑的原因
Lexar Co Limited LD4AS016G-H3200GST 16GB
报告一个错误
更快的读取速度,GB/s
16.6
13.6
测试中的平均数值
更快的写入速度,GB/s
14.2
8.3
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF25664AZ-1G4F1 2GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
40
44
读取速度,GB/s
13.6
16.6
写入速度,GB/s
8.3
14.2
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2035
3146
Micron Technology 16JTF25664AZ-1G4F1 2GB RAM的比较
Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Lexar Co Limited LD4AS016G-H3200GST 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Corsair CMK8GX4M2B3866C18 4GB
SpecTek Incorporated ?????????????????? 2GB
Apacer Technology 78.C1GM3.C7W0B 8GB
AMD R5S38G1601U2S 8GB
Kingston KHX2400C1C14/16G 16GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C14-8GTZSW 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Samsung M4 70T2953EZ3-CE6 1GB
AMD R9S48G3206U2S 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
A-DATA Technology DQVE1908 512MB
Samsung V-GeN D4S8GL24A8 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-2400C15-8GRB 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston 9965690-002.A00G 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
报告一个错误
×
Bug description
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